Midwave (4 μm) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions
S. R. KurtzSandia National Laboratories, Albuquerque, New Mexico 87185R. M. BiefeldSandia National Laboratories, Albuquerque, New Mexico 87185L. R. DawsonSandia National Laboratories, Albuquerque, New Mexico 87185K. C. BaucomSandia National Laboratories, Albuquerque, New Mexico 87185A. J. HowardSandia National Laboratories, Albuquerque, New Mexico 87185
1994en
ABI
Annotatsiya
Heterostructures with biaxially compressed, As-rich InAsSb are being investigated as active regions for midwave infrared emitters. InAs1−xSbx/In1−xGaxAs (x≊0.1) strained-layer sublattices (SLSs), nominally lattice matched to InAs, were grown using metalorganic chemical vapor deposition. An SLS light-emitting diode was demonstrated which emitted at 3.6 μm with 0.06% efficiency at 77 K. Optically pumped laser emission at 3.9 μm was observed in a SLS/InPSb heterostructure. The laser had a maximum operating temperature of approximately 100 K.
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