Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose

1. Energy dependence of silicon amorphization during ion implantation-part I

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2. Electronic theory of irradiation-induced disoerdering and annealing in semiconductors

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   ABIABI:AkademIndex/openalex/2006.article.000236