Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: The Physics of Hydrogenated Amorphous Silicon II

1. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

   V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

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2. Electronic theory of irradiation-induced disoerdering and annealing in semiconductors

   A. T. Mamadalimov, Б. Л. Оксенгендлер, N. N. Turaeva

   MaqolaSemiconductor Quantum Structures and DevicesRussian Physics Journal20060 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000236