Maqola

Dark properties and transient current response of Si0.95Ge0.05 n+p devices

A. RuzinDepartment of Physical Electronics, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978, IsraelS. MarunkoDepartment of Physical Electronics, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978, IsraelN. V. AbrosimovInstitute of Crystal Growth, Max-Born-Str. 2, D-12469 Berlin, GermanyH. RiemannInstitute of Crystal Growth, Max-Born-Str. 2, D-12469 Berlin, Germany

2003en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/j.nima.2003.11.025

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