Impurity thermovoltaic solar elements. Possible characteristics and alloying

It is shown that the efficiency of impurity thermovoltaic solar elements based on semiconductors with E g = 0.3–1.0 eV may reach about 50%. These elements will be thin-layer structures with strongly alloyed p- and n-layers. The II–VI chemical compounds have been proposed for conducting experimental investigations in the field of germanium alloying and developing germanium-based impurity thermovoltaic solar elements.

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