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Ish: (IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution
Structural defects in the epitaxial layers of semiconductors
M. G. Mil’vidskiĭ, V. B. Osvenskiĭ
Maqola19852 iqtibosABIPreparation of Ge/Si and Ge∕GaAs Heterojunctions
A. R. Riben, D.L. Feucht, W.G. Oldham
Maqola19662 iqtibosABI