Excitons in ZnP2 crystals in the electric field of a Schottky barrier
S. O. RomanovskiiA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaА. В. СелькинA.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, RussiaI.G. StamovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaН. А. ФеоктистовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
1998en
ABI
Annotatsiya
A study is made of the effect of electric fields on the exciton states of β-ZnP2 crystals (T=77 K) in structures with Schottky barriers formed by depositing semitransparent electrically-conducting InSnO2 films on the crystal surface. The observed changes in the exciton optical reflection spectra when an electrical potential is applied to a barrier are explained by the shift and broadening of the exciton level caused by the Stark effect. The experimental data are compared with calculations based on a theory of exciton optical reflection from planar spatially nonuniform structures.
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