Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

10 ta ish

Ish: Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures

  1. Statistics of the Recombinations of Holes and Electrons

    W. Shockley, W. T. Read

    Maqola195219 iqtibos
    ABI

  2. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

    Chih‐Tang Sah, Robert N. Noyce, W. Shockley

    Maqola195714 iqtibos
    ABI

  3. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19793 iqtibos
    ABI

  4. Recent developments in amorphous silicon p-n junction devices

    R.A.G. Gibson, W. E. Spear, P. G. Le Comber +1

    Maqola19802 iqtibos
    ABI

  5. Phonon-assisted carrier transport across a grain boundary

    Chung-Sheng Wu, E.S. Yang

    Maqola19822 iqtibos
    ABI

  6. RF Sputtered gold-amorphous silicon Schottky-barrier diodes

    Le Xu, D.K. Reinhard, Mark G. Thompson

    Maqola19822 iqtibos
    ABI

  7. Doped amorphous semiconductors

    P. G. LeComber, W. E. Spear

    Bob19792 iqtibos
    ABI

  8. Determination of depletion width in amorphous materials using a simple analytical model

    M. S. Shur, W. Czubatyj, A. Madan

    Maqola19802 iqtibos
    ABI

  9. Energy Conversion Process of p-i-n Amorphous Si Solar Cells

    Yukinori Kuwano, Shinya Tsuda, M. Ohnishi

    Maqola19822 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI