Dynamics of self-trapping of high-energy 3<i>p</i>-excitations in solid neon
A. G. BelovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovV. N. SvishchevPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovI. Ya. Fugol’Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI
Annotatsiya
Radiative transitions from high-energy 3p-states of solid neon are measured in the interval 585−750 nm. Each band of the 3pi→3sk is found to be due to the self-trapping of excitons in atomic-type states. The energy released during the self-trapping of excitons near the free crystal surface causes an ejection of 3p-excited atoms into vacuum followed by emission. For self-trapping in the bulk, the process is accompanied by a rearrangement of the lattice which follows the pattern of plastic deformation. The role of the recombination processes in the formation of 3p-excited states is discussed.
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