Electrical Resistance Measurements on Hydrogen‐Charged Tantalum and Niobium

Abstract By measuring the electrical resistance of tantalum and niobium wires, it is possible to detect the effective introduction of hydrogen in these b.c.c. metals by electrolytic charging. In both metals this process gives an increase of the electrical resistivity which, for low concentrations, at room temperature is Δϱ H = 0.80 μΩ cm/at.‐% hydrogen in tantalum and Δϱ H = 0.75 μΩ cm/at.‐% of hydrogen in niobium. Subsequent isochromal annealings in vacuum (10 −4 mm Hg) shows that the hydrogen introduced by electrolytic charging is completely removed at temperatures above 800 °C. This degasing process becomes important only for temperatures above 500 °C for tantalum and 400 °C for niobium.

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