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The<i>g</i>-factor and de haas-van alphen effect of electrons in bismuth

M. H. CohenCavendish Laboratory , Cambridge; Institute for the Study of Metals, University of ChicagoE. I. BlountWestinghouse Research Laboratories , Pittsburgh, Pennsylvania
1960en
ABI

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Abstract A theory of the g-factor of conduction electrons is developed which is valid for low symmetry and arbitrary strength of spin-orbit coupling. Application to bismuth shows that m≡ 2/g≃m 0 for most orientations, where m 0 is the effective mass entering the cyclotron frequency. Thus g is 260 when H is in the direction of smallest m 0. Further, the lifting of the spin degeneracy by the magnetic field introduces a factor cos τπm 0/m 8 into the rth oscillatory term in the susceptibility. This explains the apparent phase shift of τπ observed in the de Haas-van Alphen oscillations of Bi.

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