Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
Maqola

The physics of SiO<sub>2</sub>layers

J.F. VerweyPhilips Res. Lab., Eindhoven, NetherlandsE. A. AmerasekeraPhilips Res. Lab., Eindhoven, NetherlandsJ. BisschopPhilips Res. Lab., Eindhoven, Netherlands
1990en
ABI

Annotatsiya

The physics of silicon dioxide layers, with thicknesses below 100 nm, are presented in a review which focuses on the developments in the 1980s. The study deals with the whole range of SiO2 properties and behaviour, beginning with oxidation kinetics and the physical structure of SiO2, and ending with oxide breakdown and reliability test methods.

Hali tarjima qilinmagan

Identifikatorlar

Iqtiboslar va manbalar

2 ta iqtibos0 ta foydalanilgan manba