Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
Yi ShiDepartment of Physics, Nanjing University, Nanjing 210093, P. R. ChinaKenichi SaitôInstitute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku,Hiroki IshikuroInstitute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku,Toshiro HiramotoInstitute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku,
1999en
ABI
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Metal-oxide-semiconductor field-effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated. Electrical measurements have been performed in the temperature range of 20–300 K for devices of various channel dimensions. Large threshold voltage shifts are obtained, being obviously dependent on channel width, and independent of channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Furthermore, single electron charge/discharge processes are observed in the device with the narrowest channel.
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