Electronic Property of Thin Single-Crystal Films of α-Al<sub>2</sub>O<sub>3</sub>on Ru(0001)
Yoshitada MurataKazuo NagataHiroshi FujimotoT. SakuraiPhyscis Department, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585Michio OkadaPhyscis Department, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585Yuki EbeDepartment of Chemistry, Graduate School of Sciences, Osaka University, 1-1 Machikaneyama-cho, Toyonaka, Osaka 560-0043
2001en
ABI
Annotatsiya
High-quality single-crystal films of α-Al 2 O 3 with various thicknesses below 35 Å have been fabricated on the Ru(0001) surface. The phase transtion from γ- to α-Al 2 O 3 has been used for fabrication. The thickness dependence of the band gap for the oxide layer has been measured by the interband transition using electron energy loss spectroscopy. The band gap has been found to decrease with decreasing oxide thickness. The same tendency of this extraordinary result has been observed in scanning tunneling spectroscopy. These results can be interpreted by the many-body effect.
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