Maqola

Superconducting beryllium films deposited by ion-beam-sputtering

Yasushi MaedaNTT Electrical Communications Laboratories Tokai, Ibaraki, JapanKuniharu TakeiNTT Electrical Communications Laboratories Tokai, Ibaraki, JapanMasahiro OkamotoNTT Electrical Communications Laboratories Tokai, Ibaraki, JapanKiko NakamuraNTT Electrical Communications Laboratories Tokai, Ibaraki, JapanMasaru IgarashiNTT Electrical Communications Laboratories Tokai, Ibaraki, Japan

1987en

ABI

Annotatsiya

The properties of beryllium thin films deposited by ion-beam-sputtering (IBS-Be) are investigated, IBS-Be films with high superconducting transition temperatures (T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> 'S = 6-7 K) have an amorphous-like structure. T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> 's show thermal stabitlity up to 480 K. IBS-Be/BeO/Pb junctions with low leakage conductance indicate IBS-Be base electrodes do not deteriorate and that the Be-oxidized layers function as good tunnel barriers, The deduced value of the electron density of states at the Fermi level remains as low as that for bulk beryllium. IBS-Be films are considered to be advantageous for applications to tunneling and Abrikosov vortex devices.

Hali tarjima qilinmagan

Identifikatorlar

DOI: 10.1109/tmag.1987.1065006

Iqtiboslar va manbalar

2 ta iqtibos0 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar