Optoelectronic properties of In<sub>2</sub>S<sub>3</sub> thin films measured using surface photovoltage spectroscopy
S. RasoolSri Venkateswara University, Tirupati—517 502, Andhra Pradesh, IndiaK. SarithaSri Venkateswara University, Tirupati—517 502, Andhra Pradesh, IndiaK.T. Ramakrishna ReddySri Venkateswara University, Tirupati—517 502, Andhra Pradesh, IndiaLeszek BychtoKoszalin University of Technology, Koszalin, 75-453, PolandA. PatrynKoszalin University of Technology, Koszalin, 75-453, PolandM. MalińskiKoszalin University of Technology, Koszalin, 75-453, PolandМ. С. ТивановBelarusian State University, Nezavisimosti 4 av., 220030 Minsk, BelarusВ. Ф. ГременокScientific and Practical Materials Research Centre, National Academy of Sciences, 220072, Minsk, Belarus
2019en
ABI
Annotatsiya
In recent years, In 2 S 3 thin films were widely used as buffer/window layer in thin film solar cells as an alternative to toxic CdS.In the present work, we demonstrate the potential of surface photovoltage spectroscopy for estimation of minority carrier diffusion length, band gap energy and refractive index of thermally evaporated In 2 S 3 thin films.The estimated minority carrier diffusion length of In 2 S 3 thin films from SPV measurements were 0.112 μm and 0.052 μm for films annealed at 250 and 300 °C respectively.
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