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Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium

Seymur CahangirovUNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, TurkeyMehmet TopsakalUNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, TurkeyEthem AktürkUNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, TurkeyHasan ŞahinUNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, TurkeyS. ÇiraciDepartment of Physics, Bilkent University, Ankara 06800, Turkey
2009en
ABI

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First-principles calculations of structure optimization, phonon modes, and finite temperature molecular dynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, these puckered structures are ambipolar and their charge carriers can behave like a massless Dirac fermion due to their pi and pi(*) bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.

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