Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy
M. Ajmal KhanInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanT. SaitoInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanKotaro NakamuraInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanMasako BabaInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanWeijie DuInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanKatsuaki TohInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanKaoru TokoInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanTakashi SuemasuInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
2012en
ABI
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