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CdMgTe as an Electron Reflector for MgZnO/CdSeTe/CdTe Solar Cells

Alexandra BothwellColorado State University,Fort Collins,CO,United States,80523Jennifer DraytonColorado State University,Fort Collins,CO,United States,80523Pascal JundtColorado State University,Fort Collins,CO,United States,80523James R. SitesColorado State University,Fort Collins,CO,United States,80523

2019en

ABI

Annotatsiya

CdMgTe with a 1.8-eV band gap was deposited at the back of MgZnO/CdSeTe/CdTe superstrates to create a conduction band barrier and reduce back surface recombination. To minimize CdCl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> passivation loss, substrate preheat time was varied. Photoluminescence, carrier lifetime, and quantum efficiency showed improvement with shorter preheat and secondary ion mass spectrometry profiles showed retention of CdCl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> passivation for short CdMgTe preheat. An HCl acid etch treatment and CdTe cap layer were incorporated independently after the CdMgTe on additional devices to minimize magnesium oxidation and the CdTe cap device showed initial promise with device efficiency reaching 13.1%.

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Identifikatorlar

DOI: 10.1109/pvsc40753.2019.8980651

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