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Ish: Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells
Effect of О<sub>2</sub><sup>+</sup> Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface
G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov
MaqolaIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 iqtibosABI