Observation of plaid-like spin splitting in a noncoplanar antiferromagnet
Yupeng ZhuDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaXiaobing ChenDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaXiang-Rui LiuDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaYuntian LiuDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaPengfei LiuDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaHeming ZhaNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaGexing QuInstitute of PhysicsCaiyun HongKey Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, Westlake University, Hangzhou, ChinaJiayu LiDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaZhicheng JiangNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaXiao‐Ming MaDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaYu‐Jie HaoDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaMingyuan ZhuDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaWenjing LiuNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaMeng ZengDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaSreehari Jayaram3rd Institute of Physics, University of Stuttgart, Stuttgart, GermanyMalik Lenger3rd Institute of Physics, University of Stuttgart, Stuttgart, GermanyJianyang DingNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaShu MoDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, ChinaKiyohisa TanakaInstitute for Molecular Science, National Institutes of Natural Sciences, Okazaki, JapanMasashi AritaHiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima, JapanZhengtai LiuNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaMao YeNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaDawei ShenNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaJörg Wrachtrup3rd Institute of Physics, University of Stuttgart, Stuttgart, GermanyYaobo HuangShanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, ChinaRuihua HeKey Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, Westlake University, Hangzhou, ChinaShan QiaoNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China. [email protected]Qihang LiuDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China. [email protected]Chang LiuDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China. [email protected]
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