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Equivalent circuit model of Ge/Si separate absorption charge multiplication avalanche photodiode

Wei WangCollege of Electronics Engineering/International Semiconductor College, Chongqing University of Posts and Telecommunications, Chongqing 400065, ChinaTing ChenCollege of Electronics Engineering/International Semiconductor College, Chongqing University of Posts and Telecommunications, Chongqing 400065, ChinaLinshu YanCollege of Electronics Engineering/International Semiconductor College, Chongqing University of Posts and Telecommunications, Chongqing 400065, ChinaXiaoyuan BaoCollege of Electronics Engineering/International Semiconductor College, Chongqing University of Posts and Telecommunications, Chongqing 400065, ChinaYuanyuan XuCollege of Electronics Engineering/International Semiconductor College, Chongqing University of Posts and Telecommunications, Chongqing 400065, ChinaGuang WangCollege of Electronics Engineering/International Semiconductor College, Chongqing University of Posts and Telecommunications, Chongqing 400065, ChinaGuanyu WangCollege of Electronics Engineering/International Semiconductor College, Chongqing University of Posts and Telecommunications, Chongqing 400065, ChinaJun YuanCollege of Electronics Engineering/International Semiconductor College, Chongqing University of Posts and Telecommunications, Chongqing 400065, ChinaJunfeng LiInstitute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

2018en

ABI

Annotatsiya

The equivalent circuit model of Ge/Si Separate Absorption Charge Multiplication Avalanche Photodiode (SACM-APD) is proposed. Starting from the carrier rate equations in different regions of device and considering the influences of non-uniform electric field, noise, parasitic effect and some other factors, the equivalent circuit model of SACM-APD device is established, in which the steady-state and transient current voltage characteristics can be described exactly. In addition, the proposed Ge/Si SACM APD equivalent circuit model is embedded in PSpice simulator. The important characteristics of Ge/Si SACM APD such as dark current, frequency response, shot noise are simulated, the simulation results show that the simulation with the proposed model are in good agreement with the experimental results.

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Identifikatorlar

DOI: 10.1142/s0217984917503584

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