STUDY OF THE EFFECT OF Ni⁺ ION IMPLANTATION ON THE NEAR-SURFACE LAYERS OF SILICON USING MODERN ANALYSIS METHODS

In this work, a comparative study of the effect of Ar⁺ and Ni⁺ ion implantation on the structural, electronic, and optical properties of monocrystalline silicon (Si) was carried out. Ion bombardment leads to disordering of the near-surface layers and a decrease in the light transmission coefficient. After thermal annealing at T = 900 K, silicon implanted with Ni⁺ ions forms epitaxial phases and nanofilms of NiSi₂ depending on the implantation dose. Modern approaches based on artificial intelligence methods for materials analysis can significantly improve the interpretation of experimental data obtained from spectroscopy and optical measurements.

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