V. N. Ryazanov

1 works

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, Tomsk

1. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

   I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko +2

   ArticleSemiconductor materials and interfacesRussian Physics Journal19900 citations

   ABIABI:AkademIndex/openalex/1990.article.000080