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Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

I. A. BobrovnikovaKuznetsov Siberian Physicotechnical Institute at Tomsk State University, TomskM. D. VilisovaKuznetsov Siberian Physicotechnical Institute at Tomsk State University, TomskL. P. PorokhovnichenkoKuznetsov Siberian Physicotechnical Institute at Tomsk State University, TomskM. P. RuzaikinKuznetsov Siberian Physicotechnical Institute at Tomsk State University, TomskV. N. RyazanovKuznetsov Siberian Physicotechnical Institute at Tomsk State University, Tomsk
Russian Physics Journaljournal1990en
ABI

Abstract

No abstract available.

Topics

Semiconductor materials and interfacesSurface and Thin Film PhenomenaSemiconductor Quantum Structures and Devices

Identifiers

DOI
10.1007/bf01325005

Citations and references

Cited by 03 references
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