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Semiconductor Quantum Structures and Devices

469 works

  1. Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors

    U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev +1

    ArticleQuantum and electron transport phenomenaInternational Journal of Modern Physics B202020 citations
    ABI

  2. Mathematical modeling determination coefficient of magneto-optical absorption in semiconductors in presence of external pressure and temperature

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov

    ArticleSemiconductor Quantum Structures and DevicesModern Physics Letters B202116 citations
    ABI

  3. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 citations
    ABI

  4. Modeling the temperature dependence of the density oscillation of energy states in two-dimensional electronic gases under the impact of a longitudinal and transversal quantum magnetic fields

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov +1

    ArticleSemiconductor Quantum Structures and DevicesIndian Journal of Physics202215 citations
    ABI

  5. A new method for determining the bandgap in semiconductors in presence of external action taking into account lattice vibrations

    U. I. Erkaboev, G. Gulyamov, R. G. Rakhimov

    ArticleSemiconductor Quantum Structures and DevicesIndian Journal of Physics202114 citations
    ABI

  6. Influence of a quantizing magnetic field on the Fermi energy oscillations in two-dimensional semiconductors

    U. I. Erkaboev, Ulugbek M. Negmatov, R. G. Rakhimov +2

    ArticleSemiconductor Quantum Structures and DevicesInternational Journal of Applied Science and Engineering202214 citations
    ABI

  7. Determination of the dependence of the two-dimensional combined density of states on external factors in quantum-dimensional heterostructures

    G. Gulyamov, U. I. Erkaboev, R. G. Rakhimov +2

    ArticleQuantum and electron transport phenomenaModern Physics Letters B202314 citations
    ABI

  8. Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

    М. С. Саидов, B. M. Abdurakhmanov, L. O. Olimov

    ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy200714 citations
    ABI

  9. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    ArticleIon-surface interactions and analysisTechnical Physics201513 citations
    ABI

  10. Influence of the two-dimensional density of states on the temperature dependence of the electrical conductivity oscillations in heterostructures with quantum wells

    Ulugbek Erkaboev, R. G. Rakhimov, J. I. Mirzaev +2

    ArticleSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B202312 citations
    ABI

  11. Impurity thermovoltaic effect of semiconductor structures: Specific features and outlook

    М. С. Саидов

    ArticleSemiconductor materials and interfacesApplied Solar Energy200712 citations
    ABI

  12. Ferromagnetic states of p-type silicon doped with Mn

    Ziyodbek A. Yunusov, Sh. U. Yuldashev, Kh. T. Igamberdiev +5

    ArticleQuantum and electron transport phenomenaJournal of the Korean Physical Society201411 citations
    ABI

  13. Determination of the Dependence of the Oscillation of Transverse Electrical Conductivity and Magnetoresistance on Temperature in Heterostructures Based on Quantum Wells

    У. И. Эркабоев, R. G. Rakhimov

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics202311 citations
    ABI

  14. Influence of a magnetic field and temperature on the oscillations of the combined density of states in two-dimensional semiconductor materials

    U. I. Erkaboev, R. G. Rakhimov, J. I. Mirzaev +2

    ArticleSemiconductor Quantum Structures and DevicesIndian Journal of Physics202311 citations
    ABI

  15. Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells

    U. I. Erkaboev, R. G. Rakhimov

    ArticleSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology202311 citations
    ABI

  16. Simulation of temperature dependence of oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor materials

    Ulugbek Erkaboev, R. G. Rakhimov

    ArticleSemiconductor Quantum Structures and Devicese-Prime - Advances in Electrical Engineering Electronics and Energy202311 citations
    ABI

  17. The De Haas–Van Alphen effect at high temperatures and in low magnetic fields in semiconductors

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    ArticleSurface and Thin Film PhenomenaModern Physics Letters B201611 citations
    ABI

  18. A p-i-n Model of CdTe/CdS Heterostructures

    J. Janabergenov, Ш. А. Мирсагатов, Smagul Karazhanov

    ArticleQuantum Dots Synthesis And PropertiesInorganic Materials200511 citations
    ABI

  19. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    ArticleSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202011 citations
    ABI

  20. Influence temperature and strong magnetic field on oscillations of density of energy states in heterostructures with quantum wells Hgcdte/Cdhgte

    U. I. Erkaboev, N. A. Sayidov, Ulugbek Negmatov +2

    ArticleSemiconductor Quantum Structures and DevicesE3S Web of Conferences202310 citations
    ABI

  21. Temperature dependence of width band gap in <i>In<sub>x</sub>ga<sub>1-X</sub>as</i>quantum well in presence of transverse strong magnetic field

    U. I. Erkaboev, N. A. Sayidov, Ulugbek Negmatov +2

    ArticleSemiconductor Quantum Structures and DevicesE3S Web of Conferences202310 citations
    ABI

  22. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleSemiconductor materials and interfacesEast European Journal of Physics202410 citations
    ABI

  23. Concentration Dependences of the Electron Effective Mass, Fermi Energy, and Filling of Subbands in Doped InAs/AlSb Quantum Wells

    P. J. Baymatov, B. T. Abdulazizov

    ArticleSemiconductor Quantum Structures and DevicesUkrainian Journal of Physics201710 citations
    ABI

  24. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    ArticleAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics201610 citations
    ABI

  25. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    ArticleSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 citations
    ABI