Flyura Djurabekova
12 works
University of Helsinki, PO Box 43, Helsinki, Finland
Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation
S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1
ArticleIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 citationsABIInvestigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment
Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2
ArticleSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms201413 citationsABIFundamental processes of radiation modification of semiconductor nanostructures
Flyura Djurabekova, Х. Б. Ашуров, С. Е. Максимов +2
ArticleLuminescence Properties of Advanced MaterialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20138 citationsABISynergetic theory of catastrophic failures in the problem of radiation stability of solid-state electronics materials
Б. Л. Оксенгендлер, С. Е. Максимов, N. N. Turaeva +1
ArticleNuclear Issues and DefenseNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20146 citationsABIEffect of high-dose low-energy reactive-ion implantation on cold cathode properties
Flyura Djurabekova, Б. Е. Умирзаков, F. F. Umarov +1
ArticleIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20031 citationsABIComputer simulation of ion implantation with visual observation of the implantation profiles
Flyura Djurabekova, T.S. Pugacheva, F. F. Umarov +1
ArticleIon-surface interactions and analysis2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)20030 citationsABIEpitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method
Х. Б. Ашуров, Flyura Djurabekova, С. Е. Максимов +3
ArticleIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20110 citationsABI