Fundamental processes of radiation modification of semiconductor nanostructures
Abstract
Abstract The amount of studies performed in the field of microscopic models of radiation nanophysics is rather limited and, with the exception of carbon nanostructures, they are non‐systematic. The purpose of the present work is to initiate a systematic approach to build the theoretical models of radiation nanophysics with the account for fundamental properties of nano‐objects. We choose at this stage to consider two basic phenomena (Frenkel pair formation and amorphization) modified by only one nanoproperty, i.e. the presence of an interface. We develop a mathematical framework to describe the modification on the nanoscale. From the general expression for the modified radiation phenomena, we find that any radiation effect can be modified at least by 48 ways. This predicts a very rich future of radiation nanophysics both in the fundamental and applied aspects. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)