Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method
Х. Б. АшуровArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanFlyura DjurabekovaArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanС. Е. МаксимовArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanA. I. NikiforovInstitute of Semiconductor Physics, Siberian Department of the Russian Academy of Sciences, Novosibirsk, RussiaSadulla Sh. TadjimuratovArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanБ. Л. ОксенгендлерArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, Uzbekistan
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atomsjournal2011en
ABI
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