F. F. Umarov
18 works
Tashkent State University of Economics
Effect of high-dose low-energy reactive-ion implantation on cold cathode properties
Flyura Djurabekova, Б. Е. Умирзаков, F. F. Umarov +1
ArticleIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20031 citationsABIOn mechanism of low-energy heavy ions scattering on a target surface with small atomic mass
F. F. Umarov, N. N. Bazarbaev, L. B. Kudryashova +1
ArticleX-ray Spectroscopy and Fluorescence AnalysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20021 citationsABISmall angle ion scattering by structures on the single crystal surface corresponding to initial stages of adsorption
F. F. Umarov, A. M. Rasulov, A.A. Dzhurakhalov
ArticleIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19980 citationsABIInvestigation of the dynamics of changes of the Cu3 Au(100) surface in the course of ordering by low energy ion scattering
A.A. Dzhurakhalov, F. F. Umarov
Articlenanoparticles nucleation surface interactionsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20000 citationsABIComputer simulation of ion implantation with visual observation of the implantation profiles
Flyura Djurabekova, T.S. Pugacheva, F. F. Umarov +1
ArticleIon-surface interactions and analysis2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)20030 citationsABIThe ion dechanneling mechanism at grazing scattering on the surface atomic steps
A.A. Dzhurakhalov, B.S. Kalandarov, Uchkun Kutliev +1
ArticleAdvanced Chemical Physics Studies2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)20030 citationsABI<title>Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)</title>
A. M. Rasulov, A.A. Dzhurakhalov, F. F. Umarov +2
ArticleIon-surface interactions and analysisProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE20050 citationsABI