Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation
S. B. DonaevTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanБ. Е. УмирзаковTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Uzbekistan
ABI
Abstract
The surface morphology and electronic properties of nanocrystalline phases and 2–7-nm-thick Ga1-x Al x As films grown on the GaAs(111) surface by Al+ ion implantation with subsequent (laser + thermal) annealing are studied. It is found that bandgap E g of the Ga0.5Al0.5As nanocrystalline surface phase 25–30 nm in size equals 2.8–2.9 eV.
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