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Technical Physics

133 works

Journal · ISSN 1063-7842

  1. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    ArticleIon-surface interactions and analysisTechnical Physics201119 citations
    ABI

  2. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201319 citations
    ABI

  3. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201415 citations
    ABI

  4. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    ArticleMetal and Thin Film MechanicsTechnical Physics201315 citations
    ABI

  5. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    ArticleElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 citations
    ABI

  6. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisTechnical Physics201814 citations
    ABI

  7. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    ArticleMetal and Thin Film MechanicsTechnical Physics201513 citations
    ABI

  8. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    ArticleIon-surface interactions and analysisTechnical Physics201513 citations
    ABI

  9. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    ArticleElectron and X-Ray Spectroscopy TechniquesTechnical Physics201912 citations
    ABI

  10. Silicon with Magnetic Nanoclusters of Manganese Atoms as a New Ferromagnetic Material

    М. К. Бахадырханов, Х. М. Илиев, Г. Х. Мавлонов +3

    ArticleSemiconductor materials and interfacesTechnical Physics201910 citations
    ABI

  11. Transmission of electromagnetic waves through thin Cu films

    Y. S. Ergashov, З. А. Исаханов, Б. Е. Умирзаков

    ArticleAdvanced Memory and Neural ComputingTechnical Physics201610 citations
    ABI

  12. Nonlinear dynamics of the evolution of thermomagnetic perturbations in composite superconductors

    Nizam A. Taylanov, A. K. Elmurodov

    ArticlePhysics of Superconductivity and MagnetismTechnical Physics20039 citations
    ABI

  13. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20149 citations
    ABI

  14. Optimal Conditions for Nickel Doping to Improve the Efficiency of Silicon Photoelectric Cells

    М. К. Бахадырханов, Z. T. Kenzhaev

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics20219 citations
    ABI

  15. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

    Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

    ArticleIon-surface interactions and analysisTechnical Physics20198 citations
    ABI

  16. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    ArticlePhotocathodes and Microchannel PlatesTechnical Physics20198 citations
    ABI

  17. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

    З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

    ArticleSemiconductor materials and interfacesTechnical Physics20208 citations
    ABI

  18. Emission of quasi-thermal ions from a solid bombarded by cluster ions

    С. Н. Морозов, У. Х. Расулев

    ArticleIon-surface interactions and analysisTechnical Physics20097 citations
    ABI

  19. Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment

    M. B. Yusupjanova, Д. А. Ташмухамедова, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisTechnical Physics20167 citations
    ABI

  20. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    ArticleSemiconductor materials and devicesTechnical Physics20177 citations
    ABI

  21. Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface

    Z. E. Mukhtarov, З. А. Исаханов, Б. Е. Умирзаков +2

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics20156 citations
    ABI

  22. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Soadat Gulyamova +1

    ArticleTransition Metal Oxide NanomaterialsTechnical Physics20206 citations
    ABI

  23. Emissivity of Laser-Activated Pd–Ba Alloy

    S. B. Donaev, Б. Е. Умирзаков, N. M. Mustafaeva

    ArticleLaser Material Processing TechniquesTechnical Physics20195 citations
    ABI

  24. IR photodetectors operating under background illumination

    М. К. Бахадырханов, С. Б. Исамов

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics20165 citations
    ABI

  25. Defects emerging in graphene from scattering of 10-100-eV carbon atoms

    I.D. Yadgarov, V. G. Stel’makh, A. M. Rasulov +1

    ArticleGraphene research and applicationsTechnical Physics20155 citations
    ABI