Article

Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

Y. S. ErgashovTashkent State Technical University, Tashkent, 100095, Uzbekistan

Technical Physicsjournal2017en

ABI

Abstract

The variations in the composition and structure of CoSi2/Si(111) surface layers under Ar+ ion bombardment with subsequent annealing has been studied. It has been demonstrated that nanocluster phases enriched with Si atoms form on the CoSi2 surface at low doses D ≤ 1015 cm–2, and a pure Si nanofilm forms at high doses.

Topics

Electron and X-Ray Spectroscopy Techniques Ion-surface interactions and analysis Semiconductor materials and interfaces

Identifiers

DOI: 10.1134/s1063784217050103

Citations and references

Cited by 14 6 references

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