Статья

Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

Y. S. ErgashovTashkent State Technical University, Tashkent, 100095, Uzbekistan

Technical Physicsjournal2017en

ABI

Аннотация

The variations in the composition and structure of CoSi2/Si(111) surface layers under Ar+ ion bombardment with subsequent annealing has been studied. It has been demonstrated that nanocluster phases enriched with Si atoms form on the CoSi2 surface at low doses D ≤ 1015 cm–2, and a pure Si nanofilm forms at high doses.

Темы

Electron and X-Ray Spectroscopy Techniques Ion-surface interactions and analysis Semiconductor materials and interfaces

Идентификаторы

DOI: 10.1134/s1063784217050103

Цитирования и источники

Цитирований: 14 Использованных источников: 6

Показатели — AkademScholar · Скоро