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Semiconductor materials and interfaces

Работ: 771

  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

    СтатьяChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics2001Цитирований: 25
    ABI

  2. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    СтатьяSilicon and Solar Cell TechnologiesInorganic Materials2011Цитирований: 24
    ABI

  3. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    СтатьяSemiconductor materials and interfacesInternational Journal of Modern Physics B2022Цитирований: 22
    ABI

  4. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  5. On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

    Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  6. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 19
    ABI

  7. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17
    ABI

  8. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    СтатьяSemiconductor materials and interfacesModern Physics Letters B2023Цитирований: 17
    ABI

  9. Characterisation of SnSe thin films fabricated by chemical molecular beam deposition for use in thin film solar cells

    T.M. Razykov, Ganjaboy S. Boltaev, A. Bosio +8

    СтатьяChalcogenide Semiconductor Thin FilmsSolar Energy2017Цитирований: 16
    ABI

  10. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
    ABI

  11. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15
    ABI

  12. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    СтатьяSemiconductor materials and interfacesMaterials Science and Engineering B2003Цитирований: 14
    ABI

  13. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics2017Цитирований: 14
    ABI

  14. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisTechnical Physics2018Цитирований: 14
    ABI

  15. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 14
    ABI

  16. Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

    М. С. Саидов, B. M. Abdurakhmanov, L. O. Olimov

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2007Цитирований: 14
    ABI

  17. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13
    ABI

  18. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

    М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2015Цитирований: 13
    ABI

  19. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2022Цитирований: 13
    ABI

  20. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    СтатьяSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2014Цитирований: 13
    ABI

  21. Estimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Kh. Kh. Kurbanov

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 12
    ABI

  22. Impurity thermovoltaic effect of semiconductor structures: Specific features and outlook

    М. С. Саидов

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2007Цитирований: 12
    ABI

  23. Structural Properties of Silicon Doped Rare Earth Elements Ytterbium

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 11
    ABI

  24. The De Haas–Van Alphen effect at high temperatures and in low magnetic fields in semiconductors

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    СтатьяSurface and Thin Film PhenomenaModern Physics Letters B2016Цитирований: 11
    ABI

  25. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology1999Цитирований: 11
    ABI