Статья

Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

А. С. СаидовLaboratory “Growth of semiconductor materials”, Physical–Technical Institute of Uzbek Academy of Science, Mavlanov str. 2 B, Tashkent, 700084, UzbekistanA. Sh. RazzakovLaboratory “Growth of semiconductor materials”, Physical–Technical Institute of Uzbek Academy of Science, Mavlanov str. 2 B, Tashkent, 700084, UzbekistanV.A. RisaevaLaboratory “Growth of semiconductor materials”, Physical–Technical Institute of Uzbek Academy of Science, Mavlanov str. 2 B, Tashkent, 700084, UzbekistanE.A. KoschanovLaboratory “Growth of semiconductor materials”, Physical–Technical Institute of Uzbek Academy of Science, Mavlanov str. 2 B, Tashkent, 700084, Uzbekistan

Materials Chemistry and Physicsjournal2001en

ABI

Аннотация

Аннотация отсутствует.

Темы

Chalcogenide Semiconductor Thin Films Semiconductor materials and interfaces Silicon Nanostructures and Photoluminescence

Идентификаторы

DOI: 10.1016/s0254-0584(00)00230-3

Цитирования и источники

Цитирований: 25 Использованных источников: 1

Показатели — AkademScholar · Скоро