Работы, цитирующие эту работу

Работ: 25

Работа: Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

   А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

   СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13

   ABIABI:AkademIndex/openalex/2009.article.000084

2. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−<i>x</i>(ZnSe)_<i>x</i> with Nanocrystals

   А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

   СтатьяQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering2019Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.373302

3. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

   А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

   СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2011Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.386200

4. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

   Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

   СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.400552

5. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge₂)y(ZnSe)z and their photoelectric properties

   А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

   СтатьяChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B2022Цитирований: 6

   ABIABI:AkademIndex/openalex/2022.article.000686

6. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

   А. С. Саидов, K. A. Amonov, B. R. Kutlimurotov

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2016Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.222668

7. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

   А. С. Саидов, С. З. Зайнабидинов, M. U. Kalanov +2

   СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2015Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.290699

8. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

   S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2016Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.386213

9. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2017Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.392482

10. Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    СтатьяAdvanced Thermoelectric Materials and DevicesApplied Solar Energy2010Цитирований: 3

    ABIABI:AkademIndex/openalex/2010.article.000164

11. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3

    ABIABI:AkademIndex/openalex/2026.other.400553

12. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3

    ABIABI:AkademIndex/openalex/2026.other.545500

13. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 2

    ABIABI:AkademIndex/openalex/2019.article.000285

14. Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

    S.Z. Zaynabidinov, Kh. M. Madaminov

    СтатьяIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences2020Цитирований: 2

    ABIABI:AkademIndex/openalex/2020.article.001008

15. Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2010Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.499301

16. Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2009Цитирований: 1

    ABIABI:AkademIndex/openalex/2009.article.000316

17. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2022Цитирований: 1

    ABIABI:AkademIndex/openalex/2022.article.000903

18. Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

    A.Sh. Razzokov, А. С. Саидов, M.A. Shonazarova +2

    СтатьяPhase-change materials and chalcogenidesEast European Journal of Physics2025Цитирований: 1

    ABIABI:AkademIndex/openalex/2025.article.002039

19. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2007Цитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.386196

20. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.539495

21. Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 0

    ABIABI:AkademIndex/openalex/2008.article.000340

22. Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +1

    СтатьяInsect and Pesticide ResearchApplied Solar Energy2009Цитирований: 0

    ABIABI:AkademIndex/openalex/2009.article.000486

23. Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures

    А. С. Саидов, U. Kh. Rakhmonov, A. Yu. Leĭderman

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2018Цитирований: 0

    ABIABI:AkademIndex/openalex/2018.article.000627

24. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

    A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1

    СтатьяSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice2020Цитирований: 0

    ABIABI:AkademIndex/openalex/2020.article.003160

25. Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs)1 - x - у(Ge2)x(ZnSe)y

    SIRAJIDDIN ZAYNABIDINOV, Akramjon Y. Boboev, DILHAYOTJON ABDURAHIMOV

    СтатьяSemiconductor materials and interfacesComputational nanotechnology2022Цитирований: 0

    ABIABI:AkademIndex/openalex/2022.article.009602