Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions
А. С. СаидовPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKhomidkhodzha KholikovPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. V. SaparovPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
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Аннотация
Epitaxial layers of n-type solid solutions of the (Si2)1 − x (CdS)x system (0 ≤ x ≤ 0.01) were grown by liquid phase epitaxy from a tin-based solution melt confined between two horizontal p-type single crystal silicon substrates. The photosensitivity spectra of p-Si/n-(Si2)1 − x (CdS)x structures have been measured. A photoresponse peak at E ≈ 2.35 eV (1.25 eV below the top of the valence band of silicon) has been observed, which is probably related to an impurity level due to CdS molecules.
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