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Technical Physics Letters

Работ: 356

Журнал · ISSN 1063-7850

  1. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2019Цитирований: 12
    ABI

  2. Thermal spikes observed during the tantalum sputtering by gold cluster ions

    С. Н. Морозов, У. Х. Расулев

    СтатьяIon-surface interactions and analysisTechnical Physics Letters2003Цитирований: 12
    ABI

  3. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2012Цитирований: 11
    ABI

  4. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2006Цитирований: 9
    ABI

  5. Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon

    М. К. Бахадырханов, K. S. Ayupov, Х. М. Илиев +2

    СтатьяMagnetic properties of thin filmsTechnical Physics Letters2010Цитирований: 8
    ABI

  6. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2018Цитирований: 6
    ABI

  7. Developing Si(Li) nuclear radiation detectors by pulsed electric field treatment

    Р. А. Муминов, S. A. Radzhapov, А. К. Саймбетов

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2009Цитирований: 6
    ABI

  8. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2019Цитирований: 5
    ABI

  9. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5
    ABI

  10. Adsorption of Ba Atoms Influences the Composition, Emission, and Optical Properties of CdS Single Crystals

    Б. Е. Умирзаков, J. Sh. Sodiljanov, Д. А. Ташмухамедова +2

    СтатьяQuantum Dots Synthesis And PropertiesTechnical Physics Letters2021Цитирований: 5
    ABI

  11. Variation of the reflection coefficient of semiconductors in a wavelength range from 0.2 to 20 μm under the action of ultrasonic waves

    B. N. Zaveryukhin, N. N. Zaveryukhina, Oybek Tursunkulov

    СтатьяMaterial Properties and ApplicationsTechnical Physics Letters2002Цитирований: 5
    ABI

  12. Electron Microscopy and Elemental Composition of the Near-Surface Layer of Electron-Irradiated LiF Crystals

    M. A. Mussaeva, Э. М. Ибрагимова

    СтатьяIon-surface interactions and analysisTechnical Physics Letters2019Цитирований: 5
    ABI

  13. Features of the photoconductivity of iodine-doped cotton fibers illuminated in the fundamental absorption range

    A. T. Mamadalimov, B. L. Oksegendler, Sh.O. Otazhonov +4

    СтатьяDyeing and Modifying Textile FibersTechnical Physics Letters2002Цитирований: 4
    ABI

  14. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)

    А. С. Саидов, A. Yu. Leyderman, A. B. Karshiev

    СтатьяMaterial Science and ThermodynamicsTechnical Physics Letters2016Цитирований: 4
    ABI

  15. Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2

    Д. А. Ташмухамедова, M. B. Yusupjanova, G. Kh. Allayarova +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2020Цитирований: 4
    ABI

  16. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2020Цитирований: 4
    ABI

  17. Effective antireflection coating based on TiO2-SiO2 mixture for solar cells

    С. Х. Сулейманов, В. Г. Дыскин, M. U. Dzhanklych +1

    СтатьяDiamond and Carbon-based Materials ResearchTechnical Physics Letters2013Цитирований: 3
    ABI

  18. Increasing the Efficiency of Organic Solar Cells by Antireflection Coatings Based on Fluoride Composites

    С. Х. Сулейманов, Paul R. Berger, В. Г. Дыскин +3

    СтатьяOrganic Electronics and PhotovoltaicsTechnical Physics Letters2018Цитирований: 3
    ABI

  19. Thermodesorption Spectrometer of Hard-Volatile Active Organic Compounds

    S. S. Iskhakova, У. Хасанов, У. Х. Расулев +1

    СтатьяAdvanced Chemical Sensor TechnologiesTechnical Physics Letters2020Цитирований: 3
    ABI

  20. Waveguide Logic Gates for Magnetooptical Qubits

    Shukhrat Egamov, Abduvali Khidirov, Kh O Urinov +1

    СтатьяQuantum optics and atomic interactionsTechnical Physics Letters2020Цитирований: 3
    ABI

  21. The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures

    Б. Сапаев, А. С. Саидов

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2004Цитирований: 3
    ABI

  22. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
    ABI

  23. Antireflection coatings based on fluoride formulations for organic solar cells

    С. Х. Сулейманов, Paul R. Berger, В. Г. Дыскин +5

    СтатьяOrganic Electronics and PhotovoltaicsTechnical Physics Letters2016Цитирований: 3
    ABI

  24. Structure and photoelectric properties of Si1 − x Sn x epilayers

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2010Цитирований: 3
    ABI

  25. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
    ABI