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Semiconductor materials and devices

Работ: 277

  1. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  2. Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films

    D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 14
    ABI

  3. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    СтатьяMetal and Thin Film MechanicsTechnical Physics2015Цитирований: 13
    ABI

  4. Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition

    U. B. Sharopov, Kulwinder Kaur, М. К. Курбанов +4

    СтатьяSemiconductor materials and devicesThin Solid Films2021Цитирований: 13
    ABI

  5. Fragmentation of sputtered Si n O+ m clusters: Release kinetic and dissociation energies

    Н. Х. Джемилев, С. Ф. Коваленко, L.F. Lifanova +2

    СтатьяIon-surface interactions and analysisBulletin of the Russian Academy of Sciences Physics2008Цитирований: 11
    ABI

  6. Kinetics of aggregations of F 2, F 3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabberganov +1

    СтатьяElectron and X-Ray Spectroscopy TechniquesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 11
    ABI

  7. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2021Цитирований: 9
    ABI

  8. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9
    ABI

  9. Formation of defects on the surface of LiF crystals under irradiation with different ions mass

    Utkirjon Sharopov, Umid Gopparov, K. Yu. Rashidov +8

    СтатьяIon-surface interactions and analysisRadiation effects and defects in solids2022Цитирований: 9
    ABI

  10. Clusters of nickel atoms and controlling their state in silicon lattice

    М. К. Бахадырханов

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics2018Цитирований: 9
    ABI

  11. Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment

    M. B. Yusupjanova, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisTechnical Physics2016Цитирований: 7
    ABI

  12. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    СтатьяSemiconductor materials and devicesTechnical Physics2017Цитирований: 7
    ABI

  13. Three-Band Simulation of the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mi>g</a:mi> </a:math>-Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

    G. Gulyamov, B. T. Abdulazizov, P. J. Baymatov

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Nanomaterials2021Цитирований: 7
    ABI

  14. Oxidation kinetics and thermophysical properties of gamma irradiated silicon hexaboride

    M.N. Mirzayev, Khagani Farzulla Mammadov, В.А. Скуратов +6

    СтатьяAdvanced ceramic materials synthesisJournal of Alloys and Compounds2019Цитирований: 6
    ABI

  15. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design2021Цитирований: 6
    ABI

  16. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    СтатьяElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences2021Цитирований: 6
    ABI

  17. Investigation of the dose dependence of the amorphization of a Si(111) surface bombarded with low-energy Na+ ions

    S. J. Nimatov, Д. С. Руми

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 6
    ABI

  18. Features of the chemical potential of a quasi-two-dimensional electron gas at low-temperatures

    P. J. Baymatov, A. G. Gulyamov, B. T. Abdulazizov +2

    СтатьяQuantum and electron transport phenomenaInternational Journal of Modern Physics B2021Цитирований: 6
    ABI

  19. Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

    Utkirjon Sharopov, Kulwinder Kaur, М. К. Курбанов +5

    СтатьяIon-surface interactions and analysisSurface and Interface Analysis2022Цитирований: 6
    ABI

  20. Technology of production and photoelectric characteristics of AlB<sub>10</sub> heterojunctions based on silicon

    Numonjon Sultanov, Zokirjon Mirzajonov, Fakhriddin T. Yusupov

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 6
    ABI

  21. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2018Цитирований: 6
    ABI

  22. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Soadat Gulyamova +1

    СтатьяTransition Metal Oxide NanomaterialsTechnical Physics2020Цитирований: 6
    ABI

  23. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1976Цитирований: 6
    ABI

  24. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 5
    ABI

  25. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5
    ABI