Kinetics of aggregations of F 2, F 3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing
Utkirjon SharopovU.A. Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanБ.Г. АтабаевU.A. Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanR. DjabberganovU.A. Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanМ. К. КурбановU.A. Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
The temperature dependence of the generation kinetics of F centers and their aggregates in a LiF/Si(111) thin-film system after irradiation with low-energy (80-eV) electrons was studied by total current spectroscopy. It was shown that, in all cases, low-temperature annealing results in degradation of the formed centers followed by their coalescence. A new absorption band with an energy of 3.6 eV corresponding to anionic cluster complexes was found.
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