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Б.Г. Атабаев

Работ: 19

Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, Uzbekistan

  1. Procedure for determining defects in sputtered clusters of ionic crystals

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabbarganov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2016Цитирований: 14
    ABI

  2. Energy Threshold of the Atomic and Cluster Sputtering of Some Elements under Bombardment with Cs, Rb, and Na Ions

    R. Djabbarganov, Б.Г. Атабаев, З. А. Исаханов +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2019Цитирований: 14
    ABI

  3. Kinetics of aggregations of F 2, F 3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabberganov +1

    СтатьяElectron and X-Ray Spectroscopy TechniquesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 11
    ABI

  4. Defect Formation on the Surface of ZnO Using Low-Energy Electrons

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabbarganov

    СтатьяZnO doping and propertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 11
    ABI

  5. Target current spectroscopy of the alkali halides KCl, CsCl and KBr

    E.K. Alidjanov, Б.Г. Атабаев, S. Gaipov +1

    СтатьяElectron and X-Ray Spectroscopy TechniquesThin Solid Films1994Цитирований: 6
    ABI

  6. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    СтатьяSilicon and Solar Cell TechnologiesThin Solid Films2010Цитирований: 5
    ABI

  7. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2010Цитирований: 5
    ABI

  8. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2011Цитирований: 4
    ABI

  9. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 4
    ABI

  10. The emission of atomic and molecular ions under single and multiple-charged rare gas ion bombardment of LiF, KCl, SiC

    Б.Г. Атабаев, Sh.S. Radjabov, M.Kh. Akhmadzhanova

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1995Цитирований: 1
    ABI

  11. Rapid 3D Defect Mapping in SiC Betavoltaics via Positron Annihilation Tomograph

    Б.Г. Атабаев, V. I. Chepurnov, N.Yu. Arutyunov +3

    СтатьяAdvanced Energy Technologies and Civil Engineering Innovationsphysica status solidi (RRL) - Rapid Research Letters2025Цитирований: 1
    ABI

  12. Investigation of the electronic structure reconstruction during various stages of iron oxidation by target current and Auger spectroscopy

    E.K. Alidjanov, Б.Г. Атабаев, K.Yu. Prokhozev +1

    СтатьяHydrogen embrittlement and corrosion behaviors in metalsJournal of Electron Spectroscopy and Related Phenomena1994Цитирований: 0
    ABI

  13. Potential sputtering of LiF and SiC under bombardment by Ar q+ (q = 1-6) multicharged ions

    Б.Г. Атабаев

    СтатьяIon-surface interactions and analysis2005Цитирований: 0
    ABI

  14. The Influence of the Atomic Oxygen Plasma on the Surface and on the Photoelectric Properties of Solar Arrays

    Б.Г. Атабаев, L.F. Lifanova, F. Rakhimova +2

    Главаsolar cell performance optimizationKluwer Academic Publishers eBooks2006Цитирований: 0
    ABI

  15. Energy and Temperature Dependence of the Secondary Ion Emission of GaN/SiC Clusters under Cesium-Ion Bombardment

    Б.Г. Атабаев, R. Djabbarganov, M. Kh. Akhmadjanova +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 0
    ABI

  16. Temperature Dependences of the Sputtering of Negative Silicon Cluster Ions

    Б.Г. Атабаев, R. Dzabbarganov, F. R. Yuzikaeva +3

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0
    ABI

  17. The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  18. The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    СтатьяIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования2024Цитирований: 0
    ABI

  19. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

    Б.Г. Атабаев, Kh. N. Juraev, Z. Sh. Shaymardanov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Spectroscopy2025Цитирований: 0
    ABI