Silicon and Solar Cell Technologies
Работ: 568
Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions
А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12ABIInfluence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures
Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev
СтатьяSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 8ABI