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Kh.S. Daliev

Работ: 26

Institute of Applied Physics Research, National University of Uzbekistan, Tashkent, Uzbekistan

  1. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2006Цитирований: 9
    ABI

  2. Raman spectroscopy of silicon, doped with platinum and irradiated by protons

    Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1

    СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2023Цитирований: 9
    ABI

  3. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 9
    ABI

  4. Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

    Kh.S. Daliev, Sharifa B. Utamuradova, I. Kh. Khamidzhonov +3

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2001Цитирований: 8
    ABI

  5. The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

    С. З. Зайнабидинов, Kh.S. Daliev, K. P. Abdurakhmanov +3

    СтатьяSilicon and Solar Cell TechnologiesModern Physics Letters B1997Цитирований: 4
    ABI

  6. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 3
    ABI

  7. Defect Structure of Silicon Doped with Erbium

    Sharifa B. Utamuradova, Kh.S. Daliev, Alisher Khaitbaev +3

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2024Цитирований: 3
    ABI

  8. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 2
    ABI

  9. Properties of Single Crystal Silicon Doped with Vanadium

    Kh.S. Daliev, Zafarjon M. Khusanov

    СтатьяChalcogenide Semiconductor Thin FilmsEast European Journal of Physics2024Цитирований: 1
    ABI

  10. Influence of the Temperature and Cyclic Deformations of (BixSb1–x)2Te3 Films on Their Resistance

    Kh.S. Daliev, M. M. Ahmedov, M. K. Onarkulov

    СтатьяAdvanced Thermoelectric Materials and DevicesJournal of Engineering Physics and Thermophysics2021Цитирований: 1
    ABI

  11. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 1
    ABI

  12. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

    I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 1
    ABI

  13. Study of a solar cell with a silicon-based photodiode structure

    Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2024Цитирований: 1
    ABI

  14. Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au

    Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

    СтатьяChalcogenide Semiconductor Thin FilmsEast European Journal of Physics2024Цитирований: 1
    ABI

  15. Main properties of silicides of the Mo - Si system

    Sharifa B. Utamuradova, Kh.S. Daliev, S. A. Muzafarova +2

    СтатьяIntermetallics and Advanced Alloy PropertiesE3S Web of Conferences2023Цитирований: 1
    ABI

  16. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    СтатьяIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali1992Цитирований: 0
    ABI

  17. Silicon doped by rare earth elements - prospective material of microelectronics

    Kh.S. Daliev, S.Z. Zajnabidinov

    СтатьяSemiconductor materials and interfaces1995Цитирований: 0
    ABI

  18. The capacitance and IR-spectroscopy of defects in silicon and silicon structures

    S.Z. Zajnabidinov, Kh.S. Daliev

    СтатьяThermography and Photoacoustic Techniques1995Цитирований: 0
    ABI

  19. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    СтатьяSemiconductor materials and devicesTechnical Physics1997Цитирований: 0
    ABI

  20. Capacitance transient spectroscopy of radiation defects on the interface Si-SiO 2 of silcon MIS-structures

    Shakhrukh Kh. Daliev, Sharifa B. Utamuradova, Kh.S. Daliev

    СтатьяSilicon and Solar Cell Technologies2004Цитирований: 0
    ABI

  21. Investigation of properties of silicon doped titanium and interaction of titanium atoms with other impurities

    Kh.S. Daliev

    СтатьяIntermetallics and Advanced Alloy Properties2004Цитирований: 0
    ABI

  22. Europium effect on the property of metal insulator silicon (MIS) structures

    Kh.S. Daliev

    СтатьяSemiconductor materials and devices2005Цитирований: 0
    ABI

  23. Transient capacitance spectroscopy of silicon MIS-structures with an impurity of vanadium

    Kh.S. Daliev

    СтатьяSemiconductor materials and interfacesUzbekiston Fizika Zhurnali2017Цитирований: 0
    ABI

  24. Interaction of vanadium atoms with different states of oxygen in silicon

    Kh.S. Daliev

    СтатьяSilicon and Solar Cell TechnologiesUzbekiston Fizika Zhurnali2017Цитирований: 0
    ABI

  25. EFFECT OF TEMPERATURE TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM

    Kh.S. Daliev, Anifa Paluanova

    СтатьяAdvanced Materials and Semiconductor TechnologiesEurasianUnionofScientists2021Цитирований: 0
    ABI