Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate
I.B. SapaevAkfa University, Milliy Bog Street 264, 111221 Tashkent, UzbekistanS. SadullaevNRU “Tashkent Institute of Irrigation and Agricultural Mechanization Engineers”, Kori Niyoziy str., 100000 Tashkent, UzbekistanD. BabajanovTashkent State University of Economics, Islam Karimov Str. 49, 100003 Tashkent, Uzbekistan. E-Б. СапаевTashkent State Agrarian University, University street, 2, Tashkent 100140, UzbekistanA. V. UmarovTashkent State Transport University, Adilkhodjaeva street, 1, 100067 Tashkent, UzbekistanSh. Y. PulatovKokand Branch of Tashkent State Technical University, Street U.Nasir, 4, Kokand, UzbekistanO. O. MeliziaevKokand Branch of Tashkent State Technical University, Street U.Nasir, 4, Kokand, UzbekistanKh.S. DalievScientific Research Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, 100174 Tashkent, Uzbekistan
ABI
Аннотация
Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated.
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