Работы, на которые ссылается эта работа

Работ: 6

Работа: Technology of fabrication of CdS_xTe_1-x solid solution on silicon substrate

1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

   Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

   СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16

   ABIABI:AkademIndex/openalex/2026.other.200872

2. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

   А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

   СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13

   ABIABI:AkademIndex/openalex/2009.article.000084

3. Injection photodiode based on p-CdTe film

   Ш. А. Мирсагатов, A.K. Uteniyazov

   СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2012Цитирований: 11

   ABIABI:AkademIndex/openalex/2026.other.215221

4. Optical Energy Gap of the Mixed Crystal CdS_<i>x</i>Te_1-<i>x</i>

   Keiichi Ohata, Junji Saraie, Tetsuro Tanaka

   Статья1973Цитирований: 10

   ABIABI:AkademIndex/openalex/2026.other.382054

5. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

   Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

   СтатьяThermography and Photoacoustic TechniquesInorganic Materials2014Цитирований: 9

   ABIABI:AkademIndex/openalex/2014.article.000071

6. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   СтатьяPhase-change materials and chalcogenidesApplied Solar Energy2019Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.278129