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А. С. Саидов

Работ: 101

Laboratory “Growth of semiconductor materials”, Physical–Technical Institute of Uzbek Academy of Science, Mavlanov str. 2 B, Tashkent, 700084, Uzbekistan

  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

    СтатьяChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics2001Цитирований: 25
    ABI

  2. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13
    ABI

  3. Thermovoltaic properties of technical silicon melted by solar radiation

    А. С. Саидов, A. A. Abakumov, М. С. Саидов +2

    СтатьяDiverse Industrial Engineering TechnologiesApplied Solar Energy2007Цитирований: 11
    ABI

  4. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2021Цитирований: 9
    ABI

  5. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 9
    ABI

  6. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    СтатьяAdvanced Surface Polishing TechniquesPhysics of the Solid State2013Цитирований: 8
    ABI

  7. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    СтатьяPhase-change materials and chalcogenidesApplied Solar Energy2019Цитирований: 8
    ABI

  8. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    СтатьяQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering2019Цитирований: 8
    ABI

  9. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2011Цитирований: 8
    ABI

  10. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
    ABI

  11. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    СтатьяNear-Field Optical MicroscopyPhysics of the Solid State2014Цитирований: 7
    ABI

  12. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    СтатьяChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B2022Цитирований: 6
    ABI

  13. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

    А. С. Саидов, K. A. Amonov, B. R. Kutlimurotov

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2016Цитирований: 6
    ABI

  14. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    А. С. Саидов, С. З. Зайнабидинов, M. U. Kalanov +2

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2015Цитирований: 6
    ABI

  15. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    А. С. Саидов, A. Sh. Razzokov

    СтатьяSemiconductor materials and interfacesCrystallography Reports2022Цитирований: 5
    ABI

  16. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2016Цитирований: 5
    ABI

  17. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)

    А. С. Саидов, A. Yu. Leyderman, A. B. Karshiev

    СтатьяMaterial Science and ThermodynamicsTechnical Physics Letters2016Цитирований: 4
    ABI

  18. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, А. С. Саидов, Akramjon Y. Boboev +1

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 4
    ABI

  19. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2017Цитирований: 4
    ABI

  20. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 4
    ABI

  21. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

    А. С. Саидов, K. A. Amonov, Ada Yul'evna Leyderman

    СтатьяSemiconductor materials and interfacesComputational nanotechnology2019Цитирований: 4
    ABI

  22. About Possibility of Development Synergetic Processes in Semiconductors of Type AIIIBV

    Ada Leyderman, А. С. Саидов, Muslim Khashaev +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsJournal of Materials Science Research2013Цитирований: 4
    ABI

  23. Study of properties of tellurium-doped indium phosphide as photoconversion material

    A. Yu. Leĭderman, А. С. Саидов, M. M. Khashaev +1

    СтатьяPhase-change materials and chalcogenidesApplied Solar Energy2014Цитирований: 4
    ABI

  24. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2016Цитирований: 4
    ABI

  25. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    СтатьяPhotonic and Optical DevicesSemiconductors2012Цитирований: 4
    ABI