Akramjon Y. Boboev
Работ: 21
Andijan state university named after Z.M. Babur, Andijan, Uzbekistan; Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan;
Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots
С. З. Зайнабидинов, А. С. Саидов, Akramjon Y. Boboev +1
СтатьяSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 4ABIStructural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions
С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev
СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 4ABIInfluence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure
С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov
СтатьяSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)2019Цитирований: 1ABIThe Impact of Various Lighting Conditions on the Photosensitive Properties of Si<B,S> and Si<B,Rh> Structures
Akramjon Y. Boboev, Shakhriyor Kh. Yulchiev, Ziyodjon M. Ibrokhimov +1
СтатьяAdvanced Energy Technologies and Civil Engineering InnovationsEast European Journal of Physics2025Цитирований: 0ABI