The Impact of Various Lighting Conditions on the Photosensitive Properties of Si<B,S> and Si<B,Rh> Structures

The paper analyses the results of experimental studies carried out to investigate the photosensitive properties of Si<B,S> and Si<B,Rh> structures under the influence of various types of radiation. It was found that the sensitivity of photodiodes fabricated on the basis of Si<B,S> and Si<B,Rh>, increases several times (from 0.35 to 2.6 A·W1) at decreasing temperature (from 300 K to 77 K). The threshold sensitivity of Si<B,S> based photodetectors was found to be significantly higher compared to Si<B,Rh> based photodetectors (Φ ≈ 1.2-10-11 lm·Hz-1/2). Increasing the concentration of sulphur (S) or rhodium (Rh) in silicon increases the photosensitivity, but the sensitivity decreases 3-4 times when the permissible concentration is exceeded (NRh> 2.6-1015 cm-3). It was found that photodetectors based on Si<B,S> and Si<B,Rh> retain their sensitivity parameters at high levels of radiation exposure (under the action of protons, neutrons, electrons, and γ-quanta). In diodes based on p⁺-n-p-n⁺, an S-shaped I-V characteristic is observed, as well as the disappearance of the gating voltage (Usp = 0.5÷10 V) with increasing temperature. Relaxation of photoconductivity in diodes based on Si<B,S> and Si<B,Rh> is due to the increase in the lifetime of charge carriers.

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