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С. З. Зайнабидинов

Работ: 26

Andijan state university named after Z.M. Babur, Andijan, Uzbekistan

  1. Effect of γ-Irradiation on Structure and Electrophysical Properties of S-Doped ZnO Films

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev

    СтатьяZnO doping and propertiesEast European Journal of Physics2024Цитирований: 7
    ABI

  2. Prospects for the use of metal-oxide semiconductors in energy converters

    С. З. Зайнабидинов, С. И. Рембеза, Е. С. Рембеза +1

    СтатьяZnO doping and propertiesApplied Solar Energy2019Цитирований: 6
    ABI

  3. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    А. С. Саидов, С. З. Зайнабидинов, M. U. Kalanov +2

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2015Цитирований: 6
    ABI

  4. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, А. С. Саидов, Akramjon Y. Boboev +1

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 4
    ABI

  5. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

    С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 4
    ABI

  6. Influence of Deep-Level Impurities on the Strain Electric Properties of Monocrystalline Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, О. Химматкулов +1

    СтатьяSilicon Nanostructures and PhotoluminescenceUkrainian Journal of Physics2017Цитирований: 4
    ABI

  7. The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

    С. З. Зайнабидинов, Kh.S. Daliev, K. P. Abdurakhmanov +3

    СтатьяSilicon and Solar Cell TechnologiesModern Physics Letters B1997Цитирований: 4
    ABI

  8. Photoelectric Properties of n-ZnO/p-Si Heterostructures

    С. З. Зайнабидинов, A. Y. Boboev, Kh. A. Makhmudov +1

    СтатьяZnO doping and propertiesApplied Solar Energy2021Цитирований: 3
    ABI

  9. Structural Properties of Al-Doped ZnO Films

    С. З. Зайнабидинов, Shakhriyor Kh. Yulchiev, Akramjon Y. Boboev +2

    СтатьяZnO doping and propertiesEast European Journal of Physics2024Цитирований: 3
    ABI

  10. An Optimized Ultrasonic Spray Pyrolysis Device for The Production of Metal Oxide Films and Their Morfology

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev +1

    СтатьяZnO doping and propertiesEast European Journal of Physics2024Цитирований: 3
    ABI

  11. Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

    О. О. Маматкаримов, С. З. Зайнабидинов, Azizbek Abduraimov +2

    СтатьяElectromagnetic Launch and Propulsion TechnologySemiconductors2000Цитирований: 2
    ABI

  12. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 2
    ABI

  13. Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

    С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов

    СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 2
    ABI

  14. Dynamic Strain Conductivity of Compensated Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    СтатьяElectromagnetic Effects on MaterialsModern Physics Letters B1998Цитирований: 1
    ABI

  15. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    СтатьяSilicon Nanostructures and PhotoluminescenceRussian Physics Journal2010Цитирований: 1
    ABI

  16. Investigation of the influence of external effects on the behavior of gold impurity in silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2000Цитирований: 1
    ABI

  17. Baric Impurity Effects in Silicon

    Victor I. Fistul, A.R. Turaev, С. З. Зайнабидинов

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1993Цитирований: 1
    ABI

  18. Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

    С. З. Зайнабидинов, P.I. Baranskiy, И. Н. Каримов +2

    СтатьяElectromagnetic Effects on MaterialsSolid-State Electronics1995Цитирований: 1
    ABI

  19. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

    С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

    СтатьяSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)2019Цитирований: 1
    ABI

  20. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    СтатьяSemiconductor materials and devicesTechnical Physics1997Цитирований: 0
    ABI

  21. Diffusion of erbium in silicon

    С. З. Зайнабидинов, D.E. Nazirov, A. Zh. Akbarov +2

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1998Цитирований: 0
    ABI

  22. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

    M. Kаrimov, A. O. Kurbanov, С. З. Зайнабидинов +1

    СтатьяSilicon and Solar Cell TechnologiesRussian Physics Journal2006Цитирований: 0
    ABI

  23. Diffusion, solubility, and electrical properties of scandium and praseodymium in silicon

    С. З. Зайнабидинов, D. É. Nazyrov

    СтатьяSilicon and Solar Cell TechnologiesRussian Physics Journal2007Цитирований: 0
    ABI

  24. Influence of temperature on certain properties of n +-p and n +-p-p + structures based on secondary cast polycrystalline silicon

    F. S. Abdurazzakov, С. З. Зайнабидинов, B. M. Abdurakhmanov +3

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2011Цитирований: 0
    ABI

  25. Growth and Electrical Transport Properties of (SnO2)х(In2O3)1 –х (x = 0–1) Films

    С. И. Рембеза, P. E. Voronov, С. З. Зайнабидинов +3

    СтатьяGas Sensing Nanomaterials and SensorsInorganic Materials2020Цитирований: 0
    ABI